CSD19532Q5B MOSFET Transistor

The CSD19532Q5B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD19532Q5B transistor as follows.

CSD19532Q5B Transistor Specification

Transistor Code		CSD19532Q5B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0049Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		706pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3.2V
Total Gate Charge		48nC

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