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CSD17576Q5B MOSFET Transistor

The CSD17576Q5B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD17576Q5B transistor as follows.

Circuit diagram symbol of the CSD17576Q5B transistor

CSD17576Q5B Transistor Specification

Transistor Code CSD17576Q5B
Transistor Type MOSFET
Control Channel Type N-Channel
Package SON5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.002Ohm
Power Dissipation (Maximum) PD 3.1W
Drain-Source Capacitance 389pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Gate-Threshold Voltage (Maximum) 1.8V
Total Gate Charge 25nC

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