CSD16556Q5B MOSFET Transistor

The CSD16556Q5B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD16556Q5B transistor as follows.

CSD16556Q5B Transistor Specification

Transistor Code		CSD16556Q5B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON5X6
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00107Ohm
Power Dissipation (Maximum)	PD	3.2W
Drain-Source Capacitance		2270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		34nS
Gate-Threshold Voltage (Maximum)		1.7V
Total Gate Charge		36nC

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