BF410D MOSFET Transistor

The BF410D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF410D transistor as follows.

BF410D Transistor Specification

Transistor Code		BF410D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	0.018A
Drain-Source On-State Resistance (Maximum)	RDS(on)	500Ohm
Power Dissipation (Maximum)	PD	0.3W
Drain-Source Capacitance		0.5pF
Operating Junction Temperature (Maximum)		150°C

BF410D MOSFET Transistor Overview

The BF410D is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO92 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the BF410D MOSFET

Followings are the key electrical characteristics of the BF410D MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in BF410D MOSFET transistor is 20V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the BF410D MOSFET transistor is 0.018A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of BF410D MOSFET transistor when the transistor is fully turned on is 500 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the BF410D MOSFET transistor can comfortably transfer into heat without breaking is 0.3W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the BF410D MOSFET transistor is 0.5pF. This value influences to the switching speed of the BF410D MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the BF410D MOSFET transistor is switched on is . This is the rate at which BF410D MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the BF410D MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of BF410D MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the BF410D MOSFET transistor. You can download the official BF410D MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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