2N3819 MOSFET Transistor

The 2N3819 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N3819 transistor as follows.

2N3819 Transistor Specification

Transistor Code		2N3819
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	300Ohm
Power Dissipation (Maximum)	PD	0.35W
Operating Junction Temperature (Maximum)		150°C

2N3819 MOSFET Transistor Overview

The 2N3819 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO92 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 2N3819 MOSFET

Followings are the key electrical characteristics of the 2N3819 MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in 2N3819 MOSFET transistor is 25V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the 2N3819 MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the 2N3819 MOSFET transistor is 0.05A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of 2N3819 MOSFET transistor when the transistor is fully turned on is 300 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the 2N3819 MOSFET transistor can comfortably transfer into heat without breaking is 0.35W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the 2N3819 MOSFET transistor is switched on is . This is the rate at which 2N3819 MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 2N3819 MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of 2N3819 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the 2N3819 MOSFET transistor. You can download the official 2N3819 MOSFET transistor datasheet to get more infromation about this transistor.

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