1D5N60 MOSFET Transistor

The 1D5N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 1D5N60 transistor as follows.

1D5N60 Transistor Specification

Transistor Code		1D5N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8.3Ohm
Power Dissipation (Maximum)	PD	10W
Operating Junction Temperature (Maximum)		150°C

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