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APT8018L2VFR MOSFET Transistor

The APT8018L2VFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT8018L2VFR transistor as follows.

Circuit diagram symbol of the APT8018L2VFR transistor

APT8018L2VFR Transistor Specification

Transistor Code APT8018L2VFR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO264
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 43A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 833W
Drain-Source Capacitance 1180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS

APT8018L2VFR MOSFET Transistor Overview

The APT8018L2VFR is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO264 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the APT8018L2VFR MOSFET

Followings are the key electrical characteristics of the APT8018L2VFR MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in APT8018L2VFR MOSFET transistor is 800V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the APT8018L2VFR MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the APT8018L2VFR MOSFET transistor is 43A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of APT8018L2VFR MOSFET transistor when the transistor is fully turned on is 0.18 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the APT8018L2VFR MOSFET transistor can comfortably transfer into heat without breaking is 833W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the APT8018L2VFR MOSFET transistor is 1180pF. This value influences to the switching speed of the APT8018L2VFR MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the APT8018L2VFR MOSFET transistor is switched on is 17nS. This is the rate at which APT8018L2VFR MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the APT8018L2VFR MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of APT8018L2VFR MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the APT8018L2VFR MOSFET transistor. You can download the official APT8018L2VFR MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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