APT60M80L2VR MOSFET Transistor

The APT60M80L2VR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT60M80L2VR transistor as follows.

APT60M80L2VR Transistor Specification

Transistor Code		APT60M80L2VR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	830W
Drain-Source Capacitance		1450pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS

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