2SK1629-E1-E MOSFET Transistor

The 2SK1629-E1-E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK1629-E1-E transistor as follows.

2SK1629-E1-E Transistor Specification

Transistor Code		2SK1629-E1-E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		780pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		140nS

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