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STGWT40V60DF IGBT Transistor

The STGWT40V60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT40V60DF transistor as follows.

Circuit diagram symbol of the STGWT40V60DF transistor

STGWT40V60DF Transistor Specification

Transistor Code STGWT40V60DF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 283W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.15V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 220
Rise Time 17

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