MSAHX75L60D IGBT Transistor

The MSAHX75L60D is a P-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MSAHX75L60D transistor as follows.

MSAHX75L60D Transistor Specification

Transistor Code		MSAHX75L60D
Transistor Type		IGBT
IGBT Control Channel Type		P-Channel
Package		SMD-P
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		4000pF
Rise Time		50

UXPython is not the creator or an official representative of the MSAHX75L60D IGBT transistor. You can download the official MSAHX75L60D IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel IGBT

HGTD8P50G1 IGBT Transistor G8P50G IGBT Transistor TA49015 IGBT Transistor MSAGZ52F120B IGBT Transistor HGTD8P50G1S IGBT Transistor MSAHX60F60B IGBT Transistor HGTD8P50G1S9A IGBT Transistor PPNHZ52F120B IGBT Transistor MSAHZ52F120B IGBT Transistor PPNGZ52F120B IGBT Transistor MSAGX60F60B IGBT Transistor MSAGX75F60B IGBT Transistor