MSAHX60F60B IGBT Transistor

The MSAHX60F60B is a P-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MSAHX60F60B transistor as follows.

MSAHX60F60B Transistor Specification

Transistor Code		MSAHX60F60B
Transistor Type		IGBT
IGBT Control Channel Type		P-Channel
Package		SMD-P
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2500pF
Rise Time		25

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