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MIAA10WB600TMH IGBT Transistor

The MIAA10WB600TMH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIAA10WB600TMH transistor as follows.

Circuit diagram symbol of the MIAA10WB600TMH transistor

MIAA10WB600TMH Transistor Specification

Transistor Code MIAA10WB600TMH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MINIPACK_2
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 18A

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