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IXYP30N120C3 IGBT Transistor

The IXYP30N120C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYP30N120C3 transistor as follows.

Circuit diagram symbol of the IXYP30N120C3 transistor

IXYP30N120C3 Transistor Specification

Transistor Code IXYP30N120C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 416W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 100
Rise Time 46

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