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IXYK100N120B3 IGBT Transistor

The IXYK100N120B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYK100N120B3 transistor as follows.

Circuit diagram symbol of the IXYK100N120B3 transistor

IXYK100N120B3 Transistor Specification

Transistor Code IXYK100N120B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector Power Dissipation (Maximum) Pc 1150W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.6V
Collector Current (Maximum) IC 225A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 367
Rise Time 90

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