GT8N101 IGBT Transistor

The GT8N101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT8N101 transistor as follows.

GT8N101 Transistor Specification

Transistor Code		GT8N101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TOP3
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		1000

UXPython is not the creator or an official representative of the GT8N101 IGBT transistor. You can download the official GT8N101 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IKW30N60T IGBT Transistor MIXA20WB1200TED IGBT Transistor HGTD7N60B3 IGBT Transistor IXYA20N65C3D1 IGBT Transistor RJP6016JPE IGBT Transistor STGW30NC60VD IGBT Transistor VS-GT140DA60U IGBT Transistor IXGT24N170A IGBT Transistor MMG400D120B6TN IGBT Transistor FD1400R12IP4D IGBT Transistor MMG300DR120B IGBT Transistor IXGN200N60B IGBT Transistor IXGP7N60BD1 IGBT Transistor SKM75GAL123D IGBT Transistor STGWT40H65FB IGBT Transistor HGT1S10N120BNS IGBT Transistor IXBL64N250 IGBT Transistor SGP04N60 IGBT Transistor SGP15N120 IGBT Transistor IGW50N65H5A IGBT Transistor