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GT60M303 IGBT Transistor

The GT60M303 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT60M303 transistor as follows.

Circuit diagram symbol of the GT60M303 transistor

GT60M303 Transistor Specification

Transistor Code GT60M303
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 900V
Gate-Emitter Voltage (Maximum) VGE 15V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 400

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