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G6N40E1D IGBT Transistor

The G6N40E1D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G6N40E1D transistor as follows.

Circuit diagram symbol of the G6N40E1D transistor

G6N40E1D Transistor Specification

Transistor Code G6N40E1D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector Power Dissipation (Maximum) Pc 75W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.9V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 90

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