DM2G50SH12A IGBT Transistor

The DM2G50SH12A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G50SH12A transistor as follows.

DM2G50SH12A Transistor Specification

Transistor Code		DM2G50SH12A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM-1
Collector Power Dissipation (Maximum)	Pc	400W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		300
Rise Time		60

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