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ZXMS6004FFQ MOSFET Transistor

The ZXMS6004FFQ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMS6004FFQ transistor as follows.

Circuit diagram symbol of the ZXMS6004FFQ transistor

ZXMS6004FFQ Transistor Specification

Transistor Code ZXMS6004FFQ
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-23F
Transistor SMD Code 1K6
Drain-Source Voltage (Maximum) VDS 60V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 0.83W
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 1.5V

ZXMS6004FFQ MOSFET Transistor Overview

The ZXMS6004FFQ is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT-23F package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the ZXMS6004FFQ MOSFET

Followings are the key electrical characteristics of the ZXMS6004FFQ MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in ZXMS6004FFQ MOSFET transistor is 60V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the ZXMS6004FFQ MOSFET transistor is 1A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of ZXMS6004FFQ MOSFET transistor when the transistor is fully turned on is 0.5 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the ZXMS6004FFQ MOSFET transistor can comfortably transfer into heat without breaking is 0.83W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the ZXMS6004FFQ MOSFET transistor is switched on is 10nS. This is the rate at which ZXMS6004FFQ MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the ZXMS6004FFQ MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of ZXMS6004FFQ MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the ZXMS6004FFQ MOSFET transistor. You can download the official ZXMS6004FFQ MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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