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SSM3J338R MOSFET Transistor

The SSM3J338R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM3J338R transistor as follows.

Circuit diagram symbol of the SSM3J338R transistor

SSM3J338R Transistor Specification

Transistor Code SSM3J338R
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23F
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0176Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 19.5nC

SSM3J338R MOSFET Transistor Overview

The SSM3J338R is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SOT-23F package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the SSM3J338R MOSFET

Followings are the key electrical characteristics of the SSM3J338R MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SSM3J338R MOSFET transistor is 12V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SSM3J338R MOSFET transistor is 10V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SSM3J338R MOSFET transistor is 6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SSM3J338R MOSFET transistor when the transistor is fully turned on is 0.0176 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SSM3J338R MOSFET transistor can comfortably transfer into heat without breaking is 1W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SSM3J338R MOSFET transistor is 250pF. This value influences to the switching speed of the SSM3J338R MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SSM3J338R MOSFET transistor is switched on is . This is the rate at which SSM3J338R MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SSM3J338R MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SSM3J338R MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SSM3J338R MOSFET transistor. You can download the official SSM3J338R MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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