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UTT6N10Z MOSFET Transistor

The UTT6N10Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTT6N10Z transistor as follows.

Circuit diagram symbol of the UTT6N10Z transistor

UTT6N10Z Transistor Specification

Transistor Code UTT6N10Z
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.108Ohm
Power Dissipation (Maximum) PD 2.2W
Drain-Source Capacitance 46pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 1.3nS

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