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UF1010E MOSFET Transistor

The UF1010E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UF1010E transistor as follows.

Circuit diagram symbol of the UF1010E transistor

UF1010E Transistor Specification

Transistor Code UF1010E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220_TO-220F1_TO-2
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 84A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 200W
Drain-Source Capacitance 690pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 78nS

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