7N60Z MOSFET Transistor

The 7N60Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 7N60Z transistor as follows.

7N60Z Transistor Specification

Transistor Code		7N60Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220_TO-220F1_TO-2
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.83Ohm
Power Dissipation (Maximum)	PD	142W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		170nS

7N60Z MOSFET Transistor Overview

The 7N60Z is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-220_TO-220F1_TO-2 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the 7N60Z MOSFET

Followings are the key electrical characteristics of the 7N60Z MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in 7N60Z MOSFET transistor is 600V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the 7N60Z MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the 7N60Z MOSFET transistor is 7.4A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of 7N60Z MOSFET transistor when the transistor is fully turned on is 0.83 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the 7N60Z MOSFET transistor can comfortably transfer into heat without breaking is 142W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the 7N60Z MOSFET transistor is 180pF. This value influences to the switching speed of the 7N60Z MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the 7N60Z MOSFET transistor is switched on is 170nS. This is the rate at which 7N60Z MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 7N60Z MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of 7N60Z MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the 7N60Z MOSFET transistor. You can download the official 7N60Z MOSFET transistor datasheet to get more infromation about this transistor.

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