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TPCC8076 MOSFET Transistor

The TPCC8076 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCC8076 transistor as follows.

Circuit diagram symbol of the TPCC8076 transistor

TPCC8076 Transistor Specification

Transistor Code TPCC8076
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSON_ADVANCE
Drain-Source Voltage (Maximum) VDS 33V
Drain Current (Maximum) ID 27A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0046Ohm
Power Dissipation (Maximum) PD 39W
Total Gate Charge 34nC

TPCC8076 MOSFET Transistor Overview

The TPCC8076 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TSON_ADVANCE package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the TPCC8076 MOSFET

Followings are the key electrical characteristics of the TPCC8076 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in TPCC8076 MOSFET transistor is 33V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the TPCC8076 MOSFET transistor is 27A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of TPCC8076 MOSFET transistor when the transistor is fully turned on is 0.0046 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the TPCC8076 MOSFET transistor can comfortably transfer into heat without breaking is 39W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the TPCC8076 MOSFET transistor is switched on is . This is the rate at which TPCC8076 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the TPCC8076 MOSFET transistor. You can download the official TPCC8076 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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