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TPCC8009 MOSFET Transistor

The TPCC8009 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCC8009 transistor as follows.

Circuit diagram symbol of the TPCC8009 transistor

TPCC8009 Transistor Specification

Transistor Code TPCC8009
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSON_ADVANCE
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 27W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 26nC

TPCC8009 MOSFET Transistor Overview

The TPCC8009 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TSON_ADVANCE package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the TPCC8009 MOSFET

Followings are the key electrical characteristics of the TPCC8009 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in TPCC8009 MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the TPCC8009 MOSFET transistor is 24A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of TPCC8009 MOSFET transistor when the transistor is fully turned on is 0.007 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the TPCC8009 MOSFET transistor can comfortably transfer into heat without breaking is 27W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the TPCC8009 MOSFET transistor is switched on is . This is the rate at which TPCC8009 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the TPCC8009 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of TPCC8009 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the TPCC8009 MOSFET transistor. You can download the official TPCC8009 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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