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STW48N60M2-4 MOSFET Transistor

The STW48N60M2-4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW48N60M2-4 transistor as follows.

STW48N60M2-4 Transistor Specification

Transistor Code		STW48N60M2-4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247-4
Transistor SMD Code		48N60M2
Drain-Source Voltage (Maximum)	V_DS	600V
Gate-Source Voltage (Maximum)	V_GS	25V
Drain Current (Maximum)	I_D	42A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.07Ohm
Power Dissipation (Maximum)	P_D	300W
Drain-Source Capacitance		143pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		70nC

STW48N60M2-4 MOSFET Transistor Overview

The STW48N60M2-4 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-247-4 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the STW48N60M2-4 MOSFET

Followings are the key electrical characteristics of the STW48N60M2-4 MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in STW48N60M2-4 MOSFET transistor is 600V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the STW48N60M2-4 MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the STW48N60M2-4 MOSFET transistor is 42A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of STW48N60M2-4 MOSFET transistor when the transistor is fully turned on is 0.07 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the STW48N60M2-4 MOSFET transistor can comfortably transfer into heat without breaking is 300W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the STW48N60M2-4 MOSFET transistor is 143pF. This value influences to the switching speed of the STW48N60M2-4 MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the STW48N60M2-4 MOSFET transistor is switched on is 17nS. This is the rate at which STW48N60M2-4 MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the STW48N60M2-4 MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of STW48N60M2-4 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

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