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IPZ65R019C7 MOSFET Transistor

The IPZ65R019C7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPZ65R019C7 transistor as follows.

Circuit diagram symbol of the IPZ65R019C7 transistor

IPZ65R019C7 Transistor Specification

Transistor Code IPZ65R019C7
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247-4
Transistor SMD Code 65C7019
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.019Ohm
Power Dissipation (Maximum) PD 446W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 27nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 215nC

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