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STL8NH3LL MOSFET Transistor

The STL8NH3LL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STL8NH3LL transistor as follows.

Circuit diagram symbol of the STL8NH3LL transistor

STL8NH3LL Transistor Specification

Transistor Code STL8NH3LL
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERFLAT3.3X3.3
Transistor SMD Code 8NH3L
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 18V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 285pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 9nC

STL8NH3LL MOSFET Transistor Overview

The STL8NH3LL is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a POWERFLAT3.3X3.3 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the STL8NH3LL MOSFET

Followings are the key electrical characteristics of the STL8NH3LL MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in STL8NH3LL MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the STL8NH3LL MOSFET transistor is 18V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the STL8NH3LL MOSFET transistor is 8A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of STL8NH3LL MOSFET transistor when the transistor is fully turned on is 0.015 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the STL8NH3LL MOSFET transistor can comfortably transfer into heat without breaking is 2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the STL8NH3LL MOSFET transistor is 285pF. This value influences to the switching speed of the STL8NH3LL MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the STL8NH3LL MOSFET transistor is switched on is 32nS. This is the rate at which STL8NH3LL MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the STL8NH3LL MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of STL8NH3LL MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the STL8NH3LL MOSFET transistor. You can download the official STL8NH3LL MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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