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STL4N10F7 MOSFET Transistor

The STL4N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STL4N10F7 transistor as follows.

Circuit diagram symbol of the STL4N10F7 transistor

STL4N10F7 Transistor Specification

Transistor Code STL4N10F7
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERFLAT3.3X3.3
Transistor SMD Code 4N1F7
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.07Ohm
Power Dissipation (Maximum) PD 2.9W
Drain-Source Capacitance 112pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 3nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 7.8nC

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