free stats

Home » Electronics » FET » STF11NM60N Transistor

STF11NM60N MOSFET Transistor

The STF11NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STF11NM60N transistor as follows.

Circuit diagram symbol of the STF11NM60N transistor

STF11NM60N Transistor Specification

Transistor Code STF11NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220FP
Transistor SMD Code F11NM60N
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 44pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18.5nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 31nC

STF11NM60N MOSFET Transistor Overview

The STF11NM60N is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-220FP package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the STF11NM60N MOSFET

Followings are the key electrical characteristics of the STF11NM60N MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in STF11NM60N MOSFET transistor is 600V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the STF11NM60N MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the STF11NM60N MOSFET transistor is 10A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of STF11NM60N MOSFET transistor when the transistor is fully turned on is 0.45 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the STF11NM60N MOSFET transistor can comfortably transfer into heat without breaking is 25W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the STF11NM60N MOSFET transistor is 44pF. This value influences to the switching speed of the STF11NM60N MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the STF11NM60N MOSFET transistor is switched on is 18.5nS. This is the rate at which STF11NM60N MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the STF11NM60N MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of STF11NM60N MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the STF11NM60N MOSFET transistor. You can download the official STF11NM60N MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

CMT14N50 CMT14N50 MOSFET Transistor IRF640FP IRF640FP MOSFET Transistor MTB25P06FP MTB25P06FP MOSFET Transistor MTBA5N10FP MTBA5N10FP MOSFET Transistor MTDA0P10FP MTDA0P10FP MOSFET Transistor MTE010N10FP MTE010N10FP MOSFET Transistor MTE130N20FP MTE130N20FP MOSFET Transistor MTE130N20KFP MTE130N20KFP MOSFET Transistor MTE20N10FP MTE20N10FP MOSFET Transistor MTE50N10FP MTE50N10FP MOSFET Transistor MTE50N15FP MTE50N15FP MOSFET Transistor MTE65N15FP MTE65N15FP MOSFET Transistor MTEE2N20FP MTEE2N20FP MOSFET Transistor MTN10N60FP MTN10N60FP MOSFET Transistor MTN10N65FP MTN10N65FP MOSFET Transistor MTN10N65FPG MTN10N65FPG MOSFET Transistor MTN12N60FP MTN12N60FP MOSFET Transistor MTN12N65FP MTN12N65FP MOSFET Transistor MTN13N50FP MTN13N50FP MOSFET Transistor MTN14N60FP MTN14N60FP MOSFET Transistor