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MTE20N10FP MOSFET Transistor

The MTE20N10FP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE20N10FP transistor as follows.

Circuit diagram symbol of the MTE20N10FP transistor

MTE20N10FP Transistor Specification

Transistor Code MTE20N10FP
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220FP
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 28A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 224pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 8nS

MTE20N10FP MOSFET Transistor Overview

The MTE20N10FP is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-220FP package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the MTE20N10FP MOSFET

Followings are the key electrical characteristics of the MTE20N10FP MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in MTE20N10FP MOSFET transistor is 100V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the MTE20N10FP MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the MTE20N10FP MOSFET transistor is 28A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of MTE20N10FP MOSFET transistor when the transistor is fully turned on is 0.018 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the MTE20N10FP MOSFET transistor can comfortably transfer into heat without breaking is 42W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the MTE20N10FP MOSFET transistor is 224pF. This value influences to the switching speed of the MTE20N10FP MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the MTE20N10FP MOSFET transistor is switched on is 8nS. This is the rate at which MTE20N10FP MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the MTE20N10FP MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of MTE20N10FP MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the MTE20N10FP MOSFET transistor. You can download the official MTE20N10FP MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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