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SST271 MOSFET Transistor

The SST271 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SST271 transistor as follows.

Circuit diagram symbol of the SST271 transistor

SST271 Transistor Specification

Transistor Code SST271
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code P21_P31_S1_S71
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 0.05A
Drain-Source On-State Resistance (Maximum) RDS(on) 50Ohm
Power Dissipation (Maximum) PD 0.35W
Operating Junction Temperature (Maximum) 150°C

SST271 MOSFET Transistor Overview

The SST271 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SOT23 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the SST271 MOSFET

Followings are the key electrical characteristics of the SST271 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SST271 MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SST271 MOSFET transistor is 0.05A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SST271 MOSFET transistor when the transistor is fully turned on is 50 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SST271 MOSFET transistor can comfortably transfer into heat without breaking is 0.35W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SST271 MOSFET transistor is switched on is . This is the rate at which SST271 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SST271 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SST271 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SST271 MOSFET transistor. You can download the official SST271 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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