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2301H MOSFET Transistor

The 2301H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2301H transistor as follows.

Circuit diagram symbol of the 2301H transistor

2301H Transistor Specification

Transistor Code 2301H
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code 2301H
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.125Ohm
Power Dissipation (Maximum) PD 0.9W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS

2301H MOSFET Transistor Overview

The 2301H is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SOT23 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 2301H MOSFET

Followings are the key electrical characteristics of the 2301H MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 2301H MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the 2301H MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 2301H MOSFET transistor is 2A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of 2301H MOSFET transistor when the transistor is fully turned on is 0.125 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 2301H MOSFET transistor can comfortably transfer into heat without breaking is 0.9W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the 2301H MOSFET transistor is 75pF. This value influences to the switching speed of the 2301H MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 2301H MOSFET transistor is switched on is 35nS. This is the rate at which 2301H MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 2301H MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of 2301H MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the 2301H MOSFET transistor. You can download the official 2301H MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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