SML6017AFN MOSFET Transistor

The SML6017AFN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML6017AFN transistor as follows.

SML6017AFN Transistor Specification

Transistor Code		SML6017AFN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		FPACK
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	39A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	595W
Drain-Source Capacitance		6500pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		370nC

SML6017AFN MOSFET Transistor Overview

The SML6017AFN is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a FPACK package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SML6017AFN MOSFET

Followings are the key electrical characteristics of the SML6017AFN MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in SML6017AFN MOSFET transistor is 600V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the SML6017AFN MOSFET transistor is 39A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of SML6017AFN MOSFET transistor when the transistor is fully turned on is 0.17 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the SML6017AFN MOSFET transistor can comfortably transfer into heat without breaking is 595W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the SML6017AFN MOSFET transistor is 6500pF. This value influences to the switching speed of the SML6017AFN MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the SML6017AFN MOSFET transistor is switched on is . This is the rate at which SML6017AFN MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SML6017AFN MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of SML6017AFN MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SML6017AFN MOSFET transistor. You can download the official SML6017AFN MOSFET transistor datasheet to get more infromation about this transistor.

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