SML50M60BFN MOSFET Transistor

The SML50M60BFN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML50M60BFN transistor as follows.

SML50M60BFN Transistor Specification

Transistor Code		SML50M60BFN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		FPACK
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	78A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	830W
Drain-Source Capacitance		13000pF
Operating Junction Temperature (Maximum)		150°C

SML50M60BFN MOSFET Transistor Overview

The SML50M60BFN is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a FPACK package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SML50M60BFN MOSFET

Followings are the key electrical characteristics of the SML50M60BFN MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in SML50M60BFN MOSFET transistor is 500V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the SML50M60BFN MOSFET transistor is 78A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of SML50M60BFN MOSFET transistor when the transistor is fully turned on is 0.06 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the SML50M60BFN MOSFET transistor can comfortably transfer into heat without breaking is 830W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the SML50M60BFN MOSFET transistor is 13000pF. This value influences to the switching speed of the SML50M60BFN MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the SML50M60BFN MOSFET transistor is switched on is . This is the rate at which SML50M60BFN MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SML50M60BFN MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of SML50M60BFN MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

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