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SM2A02NSU MOSFET Transistor

The SM2A02NSU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM2A02NSU transistor as follows.

Circuit diagram symbol of the SM2A02NSU transistor

SM2A02NSU Transistor Specification

Transistor Code SM2A02NSU
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252-3
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 40nC

SM2A02NSU MOSFET Transistor Overview

The SM2A02NSU is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-252-3 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the SM2A02NSU MOSFET

Followings are the key electrical characteristics of the SM2A02NSU MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SM2A02NSU MOSFET transistor is 200V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SM2A02NSU MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SM2A02NSU MOSFET transistor is 16A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SM2A02NSU MOSFET transistor when the transistor is fully turned on is 0.09 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SM2A02NSU MOSFET transistor can comfortably transfer into heat without breaking is 50W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SM2A02NSU MOSFET transistor is 170pF. This value influences to the switching speed of the SM2A02NSU MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SM2A02NSU MOSFET transistor is switched on is 11nS. This is the rate at which SM2A02NSU MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SM2A02NSU MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SM2A02NSU MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SM2A02NSU MOSFET transistor. You can download the official SM2A02NSU MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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