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SM1A10NSU MOSFET Transistor

The SM1A10NSU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM1A10NSU transistor as follows.

SM1A10NSU Transistor Specification

Transistor Code		SM1A10NSU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252-3
Drain-Source Voltage (Maximum)	V_DS	100V
Gate-Source Voltage (Maximum)	V_GS	20V
Drain Current (Maximum)	I_D	10A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.175Ohm
Power Dissipation (Maximum)	P_D	60W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		9.5nC

SM1A10NSU MOSFET Transistor Overview

The SM1A10NSU is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-252-3 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the SM1A10NSU MOSFET

Followings are the key electrical characteristics of the SM1A10NSU MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in SM1A10NSU MOSFET transistor is 100V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the SM1A10NSU MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the SM1A10NSU MOSFET transistor is 10A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of SM1A10NSU MOSFET transistor when the transistor is fully turned on is 0.175 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the SM1A10NSU MOSFET transistor can comfortably transfer into heat without breaking is 60W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the SM1A10NSU MOSFET transistor is 35pF. This value influences to the switching speed of the SM1A10NSU MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the SM1A10NSU MOSFET transistor is switched on is 10nS. This is the rate at which SM1A10NSU MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SM1A10NSU MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of SM1A10NSU MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the SM1A10NSU MOSFET transistor. You can download the official SM1A10NSU MOSFET transistor datasheet to get more infromation about this transistor.

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