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SIF2N60C MOSFET Transistor

The SIF2N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIF2N60C transistor as follows.

Circuit diagram symbol of the SIF2N60C transistor

SIF2N60C Transistor Specification

Transistor Code SIF2N60C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220_TO-220FP_TO-2
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.2Ohm
Power Dissipation (Maximum) PD 54W
Operating Junction Temperature (Maximum) 150°C

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