SIF10N60C MOSFET Transistor

The SIF10N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIF10N60C transistor as follows.

SIF10N60C Transistor Specification

Transistor Code		SIF10N60C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220_TO-220FP_TO-2
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.68Ohm
Power Dissipation (Maximum)	PD	156W
Operating Junction Temperature (Maximum)		150°C

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