RSJ550N10 MOSFET Transistor

The RSJ550N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSJ550N10 transistor as follows.

RSJ550N10 Transistor Specification

Transistor Code		RSJ550N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LPTS
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		105nS
Total Gate Charge		143nC

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