free stats

Home » Electronics » FET » R5016ANJ Transistor

R5016ANJ MOSFET Transistor

The R5016ANJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R5016ANJ transistor as follows.

Circuit diagram symbol of the R5016ANJ transistor

R5016ANJ Transistor Specification

Transistor Code R5016ANJ
Transistor Type MOSFET
Control Channel Type N-Channel
Package LPTS
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.21Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 750pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Total Gate Charge 50nC

R5016ANJ MOSFET Transistor Overview

The R5016ANJ is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a LPTS package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the R5016ANJ MOSFET

Followings are the key electrical characteristics of the R5016ANJ MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in R5016ANJ MOSFET transistor is 500V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the R5016ANJ MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the R5016ANJ MOSFET transistor is 16A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of R5016ANJ MOSFET transistor when the transistor is fully turned on is 0.21 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the R5016ANJ MOSFET transistor can comfortably transfer into heat without breaking is 100W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the R5016ANJ MOSFET transistor is 750pF. This value influences to the switching speed of the R5016ANJ MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the R5016ANJ MOSFET transistor is switched on is 50nS. This is the rate at which R5016ANJ MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the R5016ANJ MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of R5016ANJ MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the R5016ANJ MOSFET transistor. You can download the official R5016ANJ MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

R5005CNJ R5005CNJ MOSFET Transistor R5007ANJ R5007ANJ MOSFET Transistor R5009ANJ R5009ANJ MOSFET Transistor R5019ANJ R5019ANJ MOSFET Transistor R6008FNJ R6008FNJ MOSFET Transistor R6018ANJ R6018ANJ MOSFET Transistor RCJ330N25 RCJ330N25 MOSFET Transistor RCJ450N20 RCJ450N20 MOSFET Transistor RSJ10HN06 RSJ10HN06 MOSFET Transistor RSJ250P10 RSJ250P10 MOSFET Transistor RSJ300N10 RSJ300N10 MOSFET Transistor RSJ400N06 RSJ400N06 MOSFET Transistor RSJ400N06FRA RSJ400N06FRA MOSFET Transistor RSJ450N04 RSJ450N04 MOSFET Transistor RSJ550N10 RSJ550N10 MOSFET Transistor RSJ650N10 RSJ650N10 MOSFET Transistor