PM600BZ MOSFET Transistor

The PM600BZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PM600BZ transistor as follows.

PM600BZ Transistor Specification

Transistor Code		PM600BZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	0.8W
Drain-Source Capacitance		114pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		39nS

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