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P6002OAG MOSFET Transistor

The P6002OAG is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P6002OAG transistor as follows.

Circuit diagram symbol of the P6002OAG transistor

P6002OAG Transistor Specification

Transistor Code P6002OAG
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOT23-6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 1.14W
Operating Junction Temperature (Maximum) 150°C

P6002OAG MOSFET Transistor Overview

Key Electrical Characteristics of the P6002OAG MOSFET

Followings are the key electrical characteristics of the P6002OAG MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in P6002OAG MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the P6002OAG MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the P6002OAG MOSFET transistor is 2.5A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of P6002OAG MOSFET transistor when the transistor is fully turned on is 0.06 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the P6002OAG MOSFET transistor can comfortably transfer into heat without breaking is 1.14W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the P6002OAG MOSFET transistor is switched on is . This is the rate at which P6002OAG MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the P6002OAG MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of P6002OAG MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the P6002OAG MOSFET transistor. You can download the official P6002OAG MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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