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FDC6020C MOSFET Transistor

The FDC6020C is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6020C transistor as follows.

Circuit diagram symbol of the FDC6020C transistor

FDC6020C Transistor Specification

Transistor Code FDC6020C
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOT23-6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 1.6W
Drain-Source Capacitance 171pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Gate-Threshold Voltage (Maximum) 1.5V

FDC6020C MOSFET Transistor Overview

Key Electrical Characteristics of the FDC6020C MOSFET

Followings are the key electrical characteristics of the FDC6020C MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in FDC6020C MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the FDC6020C MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the FDC6020C MOSFET transistor is 5.9A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of FDC6020C MOSFET transistor when the transistor is fully turned on is 0.027 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the FDC6020C MOSFET transistor can comfortably transfer into heat without breaking is 1.6W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the FDC6020C MOSFET transistor is 171pF. This value influences to the switching speed of the FDC6020C MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the FDC6020C MOSFET transistor is switched on is 16nS. This is the rate at which FDC6020C MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FDC6020C MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of FDC6020C MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the FDC6020C MOSFET transistor. You can download the official FDC6020C MOSFET transistor datasheet to get more infromation about this transistor.

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