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NX3008PBKV MOSFET Transistor

The NX3008PBKV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NX3008PBKV transistor as follows.

Circuit diagram symbol of the NX3008PBKV transistor

NX3008PBKV Transistor Specification

Transistor Code NX3008PBKV
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT666
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 0.22A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.1Ohm
Power Dissipation (Maximum) PD 0.33W

NX3008PBKV MOSFET Transistor Overview

The NX3008PBKV is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SOT666 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the NX3008PBKV MOSFET

Followings are the key electrical characteristics of the NX3008PBKV MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in NX3008PBKV MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the NX3008PBKV MOSFET transistor is 0.22A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of NX3008PBKV MOSFET transistor when the transistor is fully turned on is 4.1 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the NX3008PBKV MOSFET transistor can comfortably transfer into heat without breaking is 0.33W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the NX3008PBKV MOSFET transistor is switched on is . This is the rate at which NX3008PBKV MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the NX3008PBKV MOSFET transistor. You can download the official NX3008PBKV MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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