free stats

Home » Electronics » FET » BF1208 Transistor

BF1208 MOSFET Transistor

The BF1208 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF1208 transistor as follows.

Circuit diagram symbol of the BF1208 transistor

BF1208 Transistor Specification

Transistor Code BF1208
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT666
Drain-Source Voltage (Maximum) VDS 6V
Drain Current (Maximum) ID 0.03A
Drain-Source On-State Resistance (Maximum) RDS(on) 30Ohm
Power Dissipation (Maximum) PD 0.2W

BF1208 MOSFET Transistor Overview

The BF1208 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT666 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the BF1208 MOSFET

Followings are the key electrical characteristics of the BF1208 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in BF1208 MOSFET transistor is 6V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the BF1208 MOSFET transistor is 0.03A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of BF1208 MOSFET transistor when the transistor is fully turned on is 30 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the BF1208 MOSFET transistor can comfortably transfer into heat without breaking is 0.2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the BF1208 MOSFET transistor is switched on is . This is the rate at which BF1208 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the BF1208 MOSFET transistor. You can download the official BF1208 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

NX1029X NX1029X MOSFET Transistor 2N7002BKV 2N7002BKV MOSFET Transistor 2N7002PV 2N7002PV MOSFET Transistor BF1206F BF1206F MOSFET Transistor BF1208D BF1208D MOSFET Transistor BSS84AKV BSS84AKV MOSFET Transistor NX3008CBKV NX3008CBKV MOSFET Transistor NX3008NBKV NX3008NBKV MOSFET Transistor NX3008PBKV NX3008PBKV MOSFET Transistor