NTD4858N MOSFET Transistor

The NTD4858N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTD4858N transistor as follows.

NTD4858N Transistor Specification

Transistor Code		NTD4858N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_IPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	73A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0062Ohm
Power Dissipation (Maximum)	PD	54.5W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		12.8nC

NTD4858N MOSFET Transistor Overview

The NTD4858N is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a DPAK_IPAK package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the NTD4858N MOSFET

Followings are the key electrical characteristics of the NTD4858N MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in NTD4858N MOSFET transistor is 25V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the NTD4858N MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the NTD4858N MOSFET transistor is 73A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of NTD4858N MOSFET transistor when the transistor is fully turned on is 0.0062 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the NTD4858N MOSFET transistor can comfortably transfer into heat without breaking is 54.5W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the NTD4858N MOSFET transistor is switched on is . This is the rate at which NTD4858N MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the NTD4858N MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of NTD4858N MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the NTD4858N MOSFET transistor. You can download the official NTD4858N MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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