NDD05N50Z MOSFET Transistor

The NDD05N50Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDD05N50Z transistor as follows.

NDD05N50Z Transistor Specification

Transistor Code		NDD05N50Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_IPAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.25Ohm
Power Dissipation (Maximum)	PD	83W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		18.5nC

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