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NDD05N50Z MOSFET Transistor

The NDD05N50Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDD05N50Z transistor as follows.

Circuit diagram symbol of the NDD05N50Z transistor

NDD05N50Z Transistor Specification

Transistor Code NDD05N50Z
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK_IPAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.25Ohm
Power Dissipation (Maximum) PD 83W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 18.5nC

NDD05N50Z MOSFET Transistor Overview

The NDD05N50Z is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a DPAK_IPAK package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the NDD05N50Z MOSFET

Followings are the key electrical characteristics of the NDD05N50Z MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in NDD05N50Z MOSFET transistor is 500V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the NDD05N50Z MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the NDD05N50Z MOSFET transistor is 4.7A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of NDD05N50Z MOSFET transistor when the transistor is fully turned on is 1.25 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the NDD05N50Z MOSFET transistor can comfortably transfer into heat without breaking is 83W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the NDD05N50Z MOSFET transistor is switched on is . This is the rate at which NDD05N50Z MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the NDD05N50Z MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of NDD05N50Z MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the NDD05N50Z MOSFET transistor. You can download the official NDD05N50Z MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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