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MSW9N90 MOSFET Transistor

The MSW9N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSW9N90 transistor as follows.

Circuit diagram symbol of the MSW9N90 transistor

MSW9N90 Transistor Specification

Transistor Code MSW9N90
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P_TO-247
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 280W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 120nS
Gate-Threshold Voltage (Maximum) 5V

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